sot-223 plastic-encapsulate transistors b772 transistor pnp features power dissipation:1.25w low collector-emitter saturation voltage maximum ratings(t a =25 unless otherwise not) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -continuous -3 a p c collector dissipation 1.25 w t stg storage temperature -55~+150 / electrical characteristics t a = 2 5 unless otherwis e specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo ic=-100 a, i e =0 -40 v collector-emitter breakdown voltage v (br) ceo i c =-10ma, i b =0 -30 v emitter-base breakdown voltage v (br) ebo i e =-100 a i c =0 -6 v collector cut-off current i cbo v cb =-40 v, i e =0 -1 a collector cut-off current i ceo v ce =-30 v i b =0 -10 a emitter cut-off current i ebo v eb =-6v,i c =0 -1 a h fe 1 v ce =2v,i c =-1a 60 400 dc current gain h fe 2 v ce =-2v,i c =-100ma 32 collector-emitter saturation voltage v ce (sat) i c =-2a,i b =-0.2a -0.5 v base-emitter saturation voltage v be (sat) i c =-2a,i b =-0.2a -1.5 v transition frequency f t v ce = -5v,i c =-0.1a f= 10mhz 50 mhz classification of h fe (1) rank r o y gr range 60-120 100-200 160-320 200-400 sot-223 1. base 2. collector 3. emitter t j junction temperature 150 / r ? ja thermal resistance from j unction to ambient 1 00 /w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification %, 1 r y 201
0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 -10 -100 1 10 100 -1 -10 -100 -1000 10 100 1000 -0 -3 -6 -9 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -1 -10 -100 -1000 -1 -10 -100 -1000 1 10 100 1000 -10 -100 -1000 -0.1 -1 -10 10 100 1000 -0 -200 -400 -600 -800 -1000 -1200 -1 -10 -100 -1000 collector power dissipation p c (w) ambient temperature t a ( ) p c t a -5 500 collector current i c (ma) transition frequency f t (mhz) v ce =-5v t a =25 o c i c f t -3000 -20 3000 common emitter v ce = -2v -3000 -3000 -3000 dc current gain h fe collector current i c (ma) t a =25 o c t a =100 i c h fe -3000 collector current i c (a) collector-emitter voltage v ce (v) static characteristic i b =-1ma -2ma -3ma -4ma -5ma -6ma -7ma -8ma -9ma -10ma common emitter t a =25 =10 t a =25 t a =100 v cesat i c collector current i c (ma) collector-emitter saturation voltage v cesat (mv) - - - - =10 collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =100 t a =25 i c v besat c ob c ib f=1mhz i e =0 / i c =0 t a =25 o c v cb / v eb c ob / c ib reverse voltage v (v) capacitance c (pf) b772 t a = 2 5 o c t a = 1 0 0 o c common emitter v ce = -2v collector current i c (ma) base-emitter voltage v be (mv) v be ?? i c 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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